000			01998cas a2200289 a 4500
999			_c3193 _d3193
001			3659
005			20220912111228.0
008			750720d19541994mau x 0 a0eng c
022			_a0120146622
040			_cMUL
082	0	4	_a621.381/05 _219 _bH3924
245	0	0	_aAdvances in electronics and electron physics. _c/ edited by Peter W. Hawkes
260			_aNew York, N.Y. : _bAcademic Press, _c1984
300			_billustrations ; _c24 cm
490			_v62
500			_aPublished: Boston, Mass., <1989>-1994. includes index
650		0	_aElectronics.
650		0	_aElectrons.
650		6	_aÉlectronique
650		7	_aElectronics.
650		7	_aElectrons.
650		7	_aElektronik
650		2	_aElectronics.
650	0	7	_aElektronik.
942			_cBK
505	0		_aI. Spin polarized electrons in solid-state physics 1. Introduction 2. Experimental techniques 3. Magnetism in metals 4. Magnetism in systems with localized magnetic moments 5. The symmetry of electronic states 6. The spin dependence of the elastic scattering of electrons from solids 7. Secondary electrons 8. Surface magneto chemistry 9. Surface magnetization curves 10. Conclusion II. Predictions of deep-impurity-level energies in semiconductors 11. Introduction 12. What is a deep trap? 13. The defect molecule picture 14. The Koster-slater green’s function method 15. The tight-binding method 16. General theoretical results 17. Empirical trends in trap-level energies of point defects 18. Empirical trends in g-factors of deep impurities 19. Predictions 20. Chemical trends in transition metal impurities III. Recent advances in the electron microscopy of materials 21. Introduction to electron optical instrumentation 22. Advances in instrument 23. Developments in imaging in the electron microscope 24. Crystallographic information in the electron microscope 25. Chemical analysis in the electron microscope 26. Combination of techniques 27. Conclusion