000			01548nam a22001697a 4500
999			_c21823 _d21823
005			20221005185714.0
008			221005b ||||| |||| 00| 0 eng d
020			_ahbk
082			_a537.5 _bSt9468
100			_aShriyar Tariq, _bMS Physics, _c2016-2018 _dSupervised by Dr. Ali Hussnain
245			_aStudy of structural and morphological properties of tungsten nitride thin film prepared using plasma focus device _c/ Shriyar Tariq
260			_aLahore : _bDivision of Science & Technology, University of Education, _c2018
300			_axi, 85 p. _eCD
520			_aThe significance of this research is to perfect the technique of producing fine tungsten Nano film on silicon substrate. That will be used as diffusion barriers in integrated circuits capable of handling higher temperature without intermixing of Si and Cu. This will greatly enhance the life and working temperature range of IC’s. Nano films of tungsten nitride are formed using a Mather type dense plasma focus device on the silicon substrate and varied number of shots. Different number of shots i.e. 10, 20, 30 and 40 are employed and the effect of this variation in number of shots on crystalline arrangement and crystalline shape is studied. The XRD data of the irradiated substrate indicated the presence of different phases of WN and WN2, the number of shots determine that which phase will be dominant. The SEM micrographs revealed a uniform distribution of grains all over the substrate.
650			_aPhysics--Morphological Properties--Thin Film
942			_cTH