The significance of this research is to perfect the technique of producing fine tungsten
Nano film on silicon substrate. That will be used as diffusion barriers in integrated
circuits capable of handling higher temperature without intermixing of Si and Cu. This
will greatly enhance the life and working temperature range of IC’s. Nano films of
tungsten nitride are formed using a Mather type dense plasma focus device on the silicon
substrate and varied number of shots. Different number of shots i.e. 10, 20, 30 and 40 are
employed and the effect of this variation in number of shots on crystalline arrangement
and crystalline shape is studied. The XRD data of the irradiated substrate indicated the
presence of different phases of WN and WN2, the number of shots determine that which
phase will be dominant. The SEM micrographs revealed a uniform distribution of grains
all over the substrate.