Physics of semiconductor devices
Shur, Michael
Physics of semiconductor devices / Michael Shur - Updated ed. - Uttar Pradesh : Pearson Education, 2019 - xxiii, 640 p.
1. Basic Semiconductor Physics. 2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts. 3. Bipolar Junction Transistors. 4. Field Effect Transistors. 5. Photonic Devices. 6. Transferred-Electron Devices and Avalanche Diodes. 7. Novel Devices. APPENDICES: Physical Constants. Greek Alphabet. Units. Magnitude Prefixes. Unit Conversion Factors. Properties of Silicon. Properties of Germanium. Properties of Gallium Arsenide. Properties of Aluminum Gallium Arsendie. Properties of InP. Properties of InAs and In GaAs. Properties of HgCdTe. Properties of Diamond. Properties of SiC. Properties of ZnSe. Properties of ZnTe. Properties of Amorphous Silicon. Properties of SiO2. Properties of Si3N4. Hyperbolic Functions. Fermi Integrals. Overlap Factor and Scattering Rates. Momentum Relaxation Times and Low-Field Mobilities. Device and Circuit Simulation Programs. Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit. Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors. Periodic Table.
9789353430061 (pbk)
Semiconductors. Junction transistors. Metal-oxide semiconductor field-effect transistors.
537.622 / Sh93
Physics of semiconductor devices / Michael Shur - Updated ed. - Uttar Pradesh : Pearson Education, 2019 - xxiii, 640 p.
1. Basic Semiconductor Physics. 2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts. 3. Bipolar Junction Transistors. 4. Field Effect Transistors. 5. Photonic Devices. 6. Transferred-Electron Devices and Avalanche Diodes. 7. Novel Devices. APPENDICES: Physical Constants. Greek Alphabet. Units. Magnitude Prefixes. Unit Conversion Factors. Properties of Silicon. Properties of Germanium. Properties of Gallium Arsenide. Properties of Aluminum Gallium Arsendie. Properties of InP. Properties of InAs and In GaAs. Properties of HgCdTe. Properties of Diamond. Properties of SiC. Properties of ZnSe. Properties of ZnTe. Properties of Amorphous Silicon. Properties of SiO2. Properties of Si3N4. Hyperbolic Functions. Fermi Integrals. Overlap Factor and Scattering Rates. Momentum Relaxation Times and Low-Field Mobilities. Device and Circuit Simulation Programs. Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit. Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors. Periodic Table.
9789353430061 (pbk)
Semiconductors. Junction transistors. Metal-oxide semiconductor field-effect transistors.
537.622 / Sh93
