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Advances in electronics and electron physics. / edited by Peter W. Hawkes

Material type:

Continuing resourceSeries: ; 62Publication details: New York, N.Y. : Academic Press, 1984Description: illustrations ; 24 cmISSN:

0120146622

Subject(s):

DDC classification:

621.381/05 19 H3924

Contents:

I. Spin polarized electrons in solid-state physics 1. Introduction 2. Experimental techniques 3. Magnetism in metals 4. Magnetism in systems with localized magnetic moments 5. The symmetry of electronic states 6. The spin dependence of the elastic scattering of electrons from solids 7. Secondary electrons 8. Surface magneto chemistry 9. Surface magnetization curves 10. Conclusion II. Predictions of deep-impurity-level energies in semiconductors 11. Introduction 12. What is a deep trap? 13. The defect molecule picture 14. The Koster-slater green’s function method 15. The tight-binding method 16. General theoretical results 17. Empirical trends in trap-level energies of point defects 18. Empirical trends in g-factors of deep impurities 19. Predictions 20. Chemical trends in transition metal impurities III. Recent advances in the electron microscopy of materials 21. Introduction to electron optical instrumentation 22. Advances in instrument 23. Developments in imaging in the electron microscope 24. Crystallographic information in the electron microscope 25. Chemical analysis in the electron microscope 26. Combination of techniques 27. Conclusion

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode
Books	UE-Central Library	621.38105 H3924 (Browse shelf(Opens below))	Available		T3659

Published: Boston, Mass., <1989>-1994.
includes index

I. Spin polarized electrons in solid-state physics
1. Introduction
2. Experimental techniques
3. Magnetism in metals
4. Magnetism in systems with localized magnetic moments
5. The symmetry of electronic states
6. The spin dependence of the elastic scattering of electrons from solids
7. Secondary electrons
8. Surface magneto chemistry
9. Surface magnetization curves
10. Conclusion
II. Predictions of deep-impurity-level energies in semiconductors
11. Introduction
12. What is a deep trap?
13. The defect molecule picture
14. The Koster-slater green’s function method
15. The tight-binding method
16. General theoretical results
17. Empirical trends in trap-level energies of point defects
18. Empirical trends in g-factors of deep impurities
19. Predictions
20. Chemical trends in transition metal impurities
III. Recent advances in the electron microscopy of materials
21. Introduction to electron optical instrumentation
22. Advances in instrument
23. Developments in imaging in the electron microscope
24. Crystallographic information in the electron microscope
25. Chemical analysis in the electron microscope
26. Combination of techniques
27. Conclusion

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Advances in electronics and electron physics. / edited by Peter W. Hawkes