Physics of semiconductor devices (Record no. 19279)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 01661nam a22001937a 4500 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20191202104221.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 191202b ||||| |||| 00| 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9789353430061 (pbk) |
| 040 ## - CATALOGING SOURCE | |
| Transcribing agency | PK-IsLIS |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 537.622 |
| Item number | Sh93 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Shur, Michael |
| 245 ## - TITLE STATEMENT | |
| Title | Physics of semiconductor devices |
| Statement of responsibility, etc | / Michael Shur |
| 250 ## - EDITION STATEMENT | |
| Edition statement | Updated ed. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
| Place of publication, distribution, etc | Uttar Pradesh : |
| Name of publisher, distributor, etc | Pearson Education, |
| Date of publication, distribution, etc | 2019 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | xxiii, 640 p. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Semiconductors. Junction transistors. Metal-oxide semiconductor field-effect transistors. |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | Books |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 1. Basic Semiconductor Physics. 2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts. 3. Bipolar Junction Transistors. 4. Field Effect Transistors. 5. Photonic Devices. 6. Transferred-Electron Devices and Avalanche Diodes. 7. Novel Devices. APPENDICES: Physical Constants. Greek Alphabet. Units. Magnitude Prefixes. Unit Conversion Factors. Properties of Silicon. Properties of Germanium. Properties of Gallium Arsenide. Properties of Aluminum Gallium Arsendie. Properties of InP. Properties of InAs and In GaAs. Properties of HgCdTe. Properties of Diamond. Properties of SiC. Properties of ZnSe. Properties of ZnTe. Properties of Amorphous Silicon. Properties of SiO2. Properties of Si3N4. Hyperbolic Functions. Fermi Integrals. Overlap Factor and Scattering Rates. Momentum Relaxation Times and Low-Field Mobilities. Device and Circuit Simulation Programs. Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit. Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors. Periodic Table. |
| Withdrawn status | Damaged status | Not for loan | Home library | Current library | Date acquired | Source of acquisition | Full call number | Barcode | Date last seen | Copy number | Price effective from | Koha item type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UE-Central Library | UE-Central Library | 02.12.2019 | U.E. | 537.622 Sh93 | T12795 | 02.12.2019 | c. 1 | 02.12.2019 | Books | |||
| UE-Central Library | UE-Central Library | 02.12.2019 | U.E. | 537.622 Sh93 | T12796 | 07.01.2020 | c. 2 | 02.12.2019 | Books |
